Patent Assignment
Reel/Frame 005661/0090
Assignment of Assignors Interest.
Recorded: 1991-03-06
Pages: 3
Assignor
IKEMASU, SHINICHIROU
Executed: 1991-02-20
Assignee
FUJITSU LIMITED
1015, KAMIKODANAKA, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, 211, JAPAN
Covered Property
(1)
High Voltage Mos Transistor and Production Method Thereof, and Semicoductor Device Having High Voltage Mos Transistor and Production Method Thereof
Patent:
5,140,392 →
Application:
07/665,236 →
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.