Assignment of Assignor's Interest

Recorded: 1993-07-23 Pages: 2

Assignor

IKEUCHI, HIDEKI

Executed: 1993-07-21

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Mos Thin Film Transistor Having High Breakdown Voltage

Patent: 5,495,119 →

Application: 08/096,675 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.