Assignment of Assignor's Interest

Recorded: 1996-04-01 Pages: 3

Assignor

MIKAGI, KAORU

Executed: 1996-03-12

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Method of Fabricating a Salicide-Structured Mos Semiconductor Device Having a Cobalt Disilicide Film

Patent: 6,107,096 →

Application: 08/625,546 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.