Patent Assignment
Reel/Frame 008346/0934
Assignment of Assignor's Interest
Recorded: 1997-01-10
Pages: 2
Assignor
SUZUKI, TATSUYA
Executed: 1997-01-09
Assignee
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Method of Removing a Carbon-Contaminated Layer from a Silicon Substrate Surface for Subsequent Selective Silicon Epitaxial Growth Thereon and Apparatus for Selective Silicon Epitaxial Growth
Patent:
6,107,197 →
Application:
08/781,821 →
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.