Assignment of Assignor's Interest

Recorded: 1999-02-03 Pages: 3

Assignor

PARK, JEONG-SOO

Executed: 1999-01-06

Assignee

LG SEMICON CO., LTD.

1, HYANGJEONG-DONG, HEUNGDUK-KU, CHEONGJU-SI, CHUNGCHEONGBUK-DO, KOREA, REPUBLIC OF

Covered Property (1)

Dual Gate Mosfet Fabrication Method

Patent: 6,168,998 →

Application: 09/243,534 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.