Assignment of Assignor's Interest

Recorded: 2001-04-25 Received: 2001-05-07 Pages: 2

Assignors

TANAKA, HIROAKI

Executed: 2001-04-18

UCHIDA, HIROYUKI

Executed: 2001-04-18

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JPX, JAPAN

Covered Properties (2)

Active Matrix Substrate and Manufacturing Method Thereof

Application: 09/841,074 →

Homoepitaxial Gallium Nitride Based Photodetector and Method of Producing

Application: 09/839,941 →