Patent Assignment
Reel/Frame 011918/0735
Assignment of Assignor's Interest
Recorded: 2001-06-20
Received: 2001-06-27
Pages: 3
Assignors
JANG, SE AUG
Executed: 2001-06-07
KIM, TAE KYUN
Executed: 2001-06-07
YEO, IN SEOK
Executed: 2001-06-07
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHO'ON, KYOUNGKI-DO, KRX, KOREA, REPUBLIC OF
Covered Property
(1)
Mosfet Device Fabrication Method Capable of Allowing Application of Self-Aligned Contact Process While Maintaining Metal Gate to Have Uniform Thickness
Application:
09/884,052 →