Patent Assignment
Reel/Frame 012008/0636
Assignment of Assignor's Interest
Recorded: 2001-07-11
Received: 2001-07-31
Pages: 4
Assignor
UEDA, TETSUZO
Executed: 2001-07-11
Assignee
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
SHIROMI, CHUO-KU, MATSUSHITA IMP BUILDING - 19TH FLOOR 1-3-7, OSAKA 540-6319, JPX, JAPAN
Covered Property
(1)
Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
Application:
09/904,129 →