Patent Assignment
Reel/Frame 013798/0724
Assignment of Assignor's Interest
Recorded: 2003-03-04
Received: 2003-03-06
Pages: 2
Assignor
CHEN, PETER
Executed: 2003-02-06
Assignee
OFFICEMATE INTERNATIONAL CORP.
90 NEWFIELD AVE., EDISON, NJ, 08837, UNITED STATES
Covered Properties
(7)
Vertical Power Devices Having Retrograded-Doped Transition Regions Therein
Application:
10/199,583 →
Bookend
Application:
29/159,891 →
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Application:
09/995,019 →
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Application:
09/991,838 →
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Application:
09/992,233 →
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Application:
10/008,171 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Application:
09/833,132 →