IP Library Assignment 014545/0087
Patent Assignment
Reel/Frame 014545/0087

Assignment of Assignor's Interest

Recorded: 2003-09-30 Pages: 3
Assignor
NEC CORPORATION
Executed: 2003-08-28
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, 211-8668, JAPAN
Covered Property (1)
High-Performance Mos Transistor of Ldd Structure Having a Gate Insulating Film with a Nitride Central Portion and Oxide End Portions
Patent: 6,794,258 →
Application: 10/606,294 →
Publication: US 2004/0026752
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Dec 22, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025525/0145 →