Patent Assignment
Reel/Frame 015779/0801
Assignment of Assignor's Interest
Recorded: 2004-09-09
Pages: 2
Assignor
HITACHI, LTD
Executed: 2003-09-12
Assignee
RENESAS TECHNOLOGY CORPORATION
4-1, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Property
(1)
Fabrication Method and Device Structure of Shallow Trench Insulation for Silicon Wafer Containing Silicon-Germanium
Related Assignments
(3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 9, 2004
From: OHNISHI, KAZUHIRO; SUGII, NOBUYUKI; ONAI, TAKAHIRO
To: HITACHI, LTD.
Reel/Frame 015779/0799 →
Merger
Jul 7, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024662/0280 →
Change of Address
Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →