Patent Assignment
Reel/Frame 016835/0346
Assignment of Assignor's Interest
Recorded: 2004-12-20
Received: 2005-11-29
Pages: 3
Assignor
HITACHI, LTD.
Executed: 2004-11-24
Assignee
OPNEXT JAPAN, INC.
216, TOTSUKACHO, TOTSUKA-KU, YOKOHAMA-SHI, KANAGAWA, JPX, JAPAN
Covered Properties
(6)
Laser Diode Module
Application:
10/618,759 →
Optical Device Using Semiconductor
Application:
10/073,030 →
Burying Type Avalanche Photodiode and Fabrication Method Thereof
Application:
09/942,737 →
Laser Diode Module
Application:
09/934,562 →
Semiconductor Radiative Device
Application:
09/931,894 →
Semiconductor Photodetector with Ohmic Contact Areas Formed to Prevent Incident Light from Resolving the Areas, Semiconductor Photo Receiver and Semiconductor Device Installed with the Semiconductor Photodetector
Application:
09/905,956 →