IP Library Assignment 017297/0963
Patent Assignment
Reel/Frame 017297/0963

Assignment of Assignor's Interest

Recorded: 2006-03-02 Pages: 6
Assignor
NEXFLASH TECHNOLOGIES, INC.
Executed: 2006-02-22
Assignee
WINBOND ELECTRONICS CORPORATION
NO. 4 CREATION ROAD III, SCIENCE-BASED INDUSTRIAL PARK, HISN CHU, TAIWAN, CHINA
Covered Properties (15)
Charge Pump System with Improved Programming Current Distribution
Patent: 5,982,223 →
Application: 08/879,340 →
Threshold Voltage Convergence
Patent: 6,728,140 →
Application: 10/011,157 →
Publication: US 2003/0103381
Method and Apparatus for Multiple Byte or Page Mode Programming and Reading of a Flash Memory Array
Patent: 6,747,899 →
Application: 10/035,414 →
Publication: US 2002/0167843
Method and Apparatus for Multiple Byte or Page Mode Programming and Reading and for Erasing of a Flash Memory Array
Patent: 6,731,544 →
Application: 10/039,518 →
Publication: US 2002/0167844
Virtual Ground Nonvolatile Semiconductor Memory Array Architecture and Integrated Circuit Structure Therefor
Patent: 6,826,080 →
Application: 10/154,979 →
Publication: US 2003/0218908
Nonvolatile Semiconductor Memory Having Three-Level Memory Cells and Program and Read Mapping Circuits Therefor
Patent: 6,847,550 →
Application: 10/280,939 →
Publication: US 2004/0080979
Nonvolatile Memory Integrated Circuit Having Volatile Utility and Buffer Memories, and Method of Operation Thereof
Patent: 6,775,184 →
Application: 10/349,384 →
Publication: US 2004/0141374
Serial flash integrated circuit having error detection and correction
Application: 10/349,748 →
Publication: US 2004/0153902
Virtual Ground Single Transistor Memory Cell, Memory Array Incorporating Same, and Method of Operation Thereof
Patent: 6,873,004 →
Application: 10/358,645 →
Method and Apparatus for Providing Row Redundancy in Nonvolatile Semiconductor Memory
Patent: 6,771,541 →
Application: 10/375,556 →
Nonvolatile Memory and Method of Operation Thereof to Control Erase Disturb
Patent: 6,768,671 →
Application: 10/382,719 →
Nonvolatile Memory Having Bit Line Discharge, and Method of Operation Thereof
Patent: 6,909,639 →
Application: 10/421,458 →
Publication: US 2004/0213048
Serial flash semiconductor memory
Application: 10/951,187 →
Serial Flash Semiconductor Memory
Patent: 7,558,900 →
Application: 11/078,205 →
Publication: US 2006/0067123
Small Sector Floating Gate Flash Memory
Patent: 7,319,617 →
Application: 11/129,646 →
Publication: US 2006/0256606
Related Assignments (4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 5, 2001
From: HAN, KYUNG JOON; PARK, JOO WEON; KWON, GYU-WAN; TRAN, DUNG
To: NEXFLASH TECHNOLOGIES, INC.
Reel/Frame 012378/0434 →
Assignment of Assignor's Interest Jan 5, 2005
From: JIGOUR, ROBIN J.; PARK, EUNGJOON; PARK, JOO WEON; LEE, JONG SEUK
To: NEXFLASH TECHNOLOGIES, INC.
Reel/Frame 015539/0535 →
Assignment of Assignor's Interest Mar 11, 2005
From: JIGOUR, ROBIN J.; PARK, EUNGJOON; PARK, JOO WEON; LEE, JONG SEUK
To: NEXFLASH TECHNOLOGIES, INC.
Reel/Frame 016376/0440 →
Assignment of Assignor's Interest May 13, 2005
From: PARK, EUNGJOON
To: NEXFLASH TECHNOLOGIES, INC.
Reel/Frame 016568/0799 →