Patent Assignment
Reel/Frame 018219/0279
Assignment of Assignor's Interest
Recorded: 2006-08-25
Received: 2006-08-31
Pages: 3
Assignor
SPADEA, GREGORIO
Executed: 2002-05-14
Assignee
VIRTUAL SILICON TECHNOLOGY, INC.
1200 CROSSMAN AVENUE, #200, SUNNYVALE, CA, 94089, UNITED STATES
Covered Property
(1)
Method for Manufacturing a High Voltage LDMOS Device Having an STI Between Source/Drain Regions.
Application:
11/510,044 →