Patent Assignment
Reel/Frame 019069/0141
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2007-03-27
Received: 2007-03-27
Pages: 6
Assignor
SPANSION INC.
Executed: 2007-01-31
Assignee
SPANSION LLC
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Applications
(8)
NONVOLATILE MEMORY CELL WITH A NITRIDATED OXIDE LAYER
App. No. 10/199,793
→
HARD MASK REMOVAL PROCESS INCLUDING ISOLATION DIELECTRIC REFILL
App. No. 10/165,837
→
METHOD OF PROGRAMMING A NON-VOLATILE MEMORY CELL USING A VERTICAL ELECTRIC FIELD
App. No. 09/899,721
→
METHOD OF PROGRAMMING A NON-VOLATILE MEMORY CELL USING A SUBSTRATE BIAS
App. No. 09/884,409
→
METHOD OF DRAIN AVALANCHE PROGRAMMING OF A NON-VOLATILE MEMORY CELL
App. No. 09/884,402
→
SILICIDED BURIED BITLINE PROCESS FOR A NON-VOLATILE MEMORY CELL
App. No. 09/885,426
→
METHOD OF PROGRAMMING A NON-VOLATILE MEMORY CELL USING A BAKING PROCESS
App. No. 09/880,366
→
THREE METAL PROCESS FOR OPTIMIZING LAYOUT DENSITY
App. No. 09/767,341
→