Patent Assignment
Reel/Frame 019069/0348
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2007-03-27
Received: 2007-03-27
Pages: 6
Assignor
SPANSION INC.
Executed: 2007-01-31
Assignee
SPANSION LLC
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Applications
(35)
SO2 TREATMENT OF OXIDIZED CUO FOR COPPER SULFIDE FORMATION OF MEMORY ELEMENT GROWTH
App. No. 10/957,247
→
PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS
App. No. 10/951,370
→
CUS FORMATION BY ANODIC SULFIDE PASSIVATION OF COPPER SURFACE
App. No. 10/885,944
→
CONTROL OF MEMORY ARRAYS UTILIZING ZENER DIODE-LIKE DEVICES
App. No. 10/882,538
→
DIELECTRIC PATTERN FORMATION FOR ORGANIC ELECTRONIC DEVICES
App. No. 10/726,868
→
POST CMP PRECURSOR TREATMENT
App. No. 10/726,829
→
SIDEWALL FORMATION FOR HIGH DENSITY POLYMER MEMORY ELEMENT ARRAY
App. No. 10/699,903
→
MEMORY ELEMENT FORMATION WITH PHOTOSENSITIVE POLYMER DIELECTRIC
App. No. 10/700,021
→
ORGANIC MEMORY CELL FORMATION ON AG SUBSTRATE
App. No. 10/676,612
→
SELF ASSEMBLY OF CONDUCTING POLYMER FOR FORMATION OF POLYMER MEMORY CELL
App. No. 10/677,042
→
SILICON CONTAINING MATERIAL FOR PATTERNING POLYMERIC MEMORY ELEMENT
App. No. 10/614,484
→
POLYMER MEMORY DEVICE FORMED IN VIA OPENING
App. No. 10/614,397
→
PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS
App. No. 10/405,272
→
APPARATUS AND METHOD FOR A SENSE AMPLIFIER CIRCUIT THAT SAMPLES AND HOLDS A REFERENCE VOLTAGE
App. No. 10/389,149
→
SPIN ON POLYMERS FOR ORGANIC MEMORY DEVICES
App. No. 10/385,375
→
METHOD AND SYSTEM FOR TESTING TUNNEL OXIDE ON A MEMORY-RELATED STRUCTURE
App. No. 10/339,536
→
SELECTIVE FORMATION OF TOP MEMORY ELECTRODE BY ELECTROLESS FORMATION OF CONDUCTIVE MATERIALS
App. No. 10/314,837
→
METHODS OF FORMING PASSIVE LAYERS IN ORGANIC MEMORY CELLS
App. No. 10/313,494
→
METHOD OF FORMING COPPER SULFIDE FOR MEMORY CELL
App. No. 10/314,060
→
METHOD FOR PRODUCING A LOW DEFECT HOMOGENEOUS OXYNITRIDE
App. No. 10/306,382
→
MOCVD FORMATION OF CU2S
App. No. 10/305,889
→
CONTROL OF MEMORY ARRAYS UTILIZING ZENER DIODE-LIKE DEVICES
App. No. 10/287,363
→
SYSTEM AND METHOD OF FORMING A PASSIVE LAYER BY A CMP PROCESS
App. No. 10/284,769
→
MULTI-CELL ORGANIC MEMORY ELEMENT AND METHODS OF OPERATING AND FABRICATING
App. No. 10/284,946
→
MEMORY CELL FORMATION WITH PROCESS FOR PATTERNING CONDUCTING POLYMER FILMS
App. No. 10/285,183
→
METHODS FOR FABRICATING AND PLANARIZING DUAL POLY SCALABLE SONOS FLASH MEMORY
App. No. 10/244,369
→
VIRTUAL GROUND SILICIDE BIT LINE PROCESS FOR FLOATING GATE FLASH MEMORY
App. No. 10/238,412
→
PRECHARGING SCHEME FOR READING A MEMORY CELL
App. No. 10/226,912
→
REFLOWABLE-DOPED HDP FILM
App. No. 10/217,403
→
METHOD OF PROTECTING A STACKED GATE STRUCTURE DURING FABRICATION
App. No. 10/217,807
→
METHOD AND SYSTEM FOR DETECTING TUNNEL OXIDE ENCROACHMENT ON A MEMORY DEVICE
App. No. 10/217,965
→
2BIT/CELL ARCHITECTURE FOR FLOATING GATE FLASH MEMORY PRODUCT AND ASSOCIATED METHOD
App. No. 10/180,673
→
PROCESS TO IMPROVE THE VSS LINE FORMATION FOR HIGH DENSITY FLASH MEMORY AND RELATED STRUCTURE ASSOCIATED THEREWITH
App. No. 10/179,723
→
INNOVATIVE NARROW GATE FORMATION FOR FLOATING GATE FLASH TECHNOLOGY
App. No. 10/178,106
→
METHOD OF DETECTING AND DISTINGUISHING STACK GATE EDGE DEFECTS AT THE SOURCE OR DRAIN JUNCTION
App. No. 10/126,193
→