Patent Assignment
Reel/Frame 019942/0570
Assignment of Assignor's Interest
Recorded: 2007-09-24
Pages: 3
Assignor
HAYASHI, KEIJI
Executed: 2007-09-14
Assignee
SHARP KABUSHIKI KAISHA
22-22 NAGAIKE-CHO ABENO-KU, OSAKA-SHI, OSAKA, 545-8522, JAPAN
Covered Property
(1)
High Withstand Voltage Trenched Mos Transistor and Manufacturing Method Thereof
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.