IP Library Assignment 020086/0433
Patent Assignment
Reel/Frame 020086/0433

Assignment of Assignor's Interest

Recorded: 2007-11-08 Pages: 5
Assignors
KAGA, YOUICHIROU
Executed: 2007-09-03
WATANABE, JUNICHI
Executed: 2007-09-03
IMAMURA, HISAYUKI
Executed: 2007-09-03
KIKUCHI, HIROMI
Executed: 2007-09-03
Assignee
HITACHI METALS, LTD.
1-2-1, SHIBAURA, MINATO-KU, TOKYO 105-8614, JAPAN
Covered Property (1)
Silicon Nitride Substrate, a Manufacturing Method of the Silicon Nitride Substrate, a Silicon Nitride Wiring Board Using the Silicon Nitride Substrate, and Semiconductor Module
Patent: 7,915,533 →
Application: 11/911,794 →
Publication: US 2009/0039477
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Dec 27, 2023
From: HITACHI METALS, LTD.
To: PROTERIAL, LTD.
Reel/Frame 066130/0563 →