Patent Assignment
Reel/Frame 020379/0396
Assignment of Assignor's Interest
Recorded: 2008-01-10
Pages: 3
Assignors
HIKIDA, SATOSHI
Executed: 2007-11-21
OTABE, TAKUYA
Executed: 2007-11-21
YONEMOTO, HISASHI
Executed: 2007-11-21
Assignee
SHARP KABUSHIKI KAISHA
22-22 NAGAIKE-CHO, ABENO-KU, OSAKA-SHI, OSAKA, 545-8522, JAPAN
Covered Property
(1)
Semiconductor Device Comprising High-Withstand Voltage Mosfet and Its Manufacturing Method
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.