IP Library Assignment 020772/0712
Patent Assignment
Reel/Frame 020772/0712

Assignment of Assignor's Interest

Recorded: 2008-04-08 Pages: 3
Assignors
NAKAMURA, SHUJI
Executed: 2008-04-04
SPECK, JAMES S.
Executed: 2008-04-04
DENBAARS, STEVEN P.
Executed: 2008-04-04
TYAGI, ANURAG
Executed: 2008-04-04
Assignee
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
1111 FRANKLIN STREET, 12TH FLOOR, OAKLAND, CALIFORNIA, 94607
Covered Properties (2)
Cleaved Facet (Ga,Al,in) N Edge-Emitting Laser Diodes Grown on Semipolar {11-2N} Bulk Gallium Nitride Substrates
Cleaved Facet (Ga,Al,in)N Edge-Emitting Laser Diodes Grown on Semipolar Bulk Gallium Nitride Substrates
Patent: 8,541,869 →
Application: 12/030,099 →
Publication: US 2008/0191223