IP Library Assignment 021056/0030
Patent Assignment
Reel/Frame 021056/0030

Assignment of Assignor's Interest

Recorded: 2008-05-23 Pages: 6
Assignors
GOH, LUONA
Executed: 2008-05-22
TIAN, JINGZE
Executed: 2008-05-22
LU, WEI
Executed: 2008-05-22
ZHOU, MEI SHENG
Executed: 2008-05-23
Assignee
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
60 WOODLANDS INDUSTRIAL PARK D, STREET 2, 738406, SINGAPORE
Covered Property (1)
High shrinkage stress silicon nitride (SiN) layer for NFET improvement
Application: 12/154,605 →
Publication: US 2009/0289284
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Jun 2, 2010
From: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
To: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
Reel/Frame 024476/0268 →
Change of Name Jun 2, 2010
From: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
To: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
Reel/Frame 024476/0275 →