IP Library › Assignment 021253/0208
Patent Assignment
Reel/Frame 021253/0208

Release

Recorded: 2008-07-14 Received: 2008-07-15 Pages: 5
Assignor
Assignee
SILICON SEMICONDUCTOR CORPORATION
920 MAIN CAMPUS DRIVE, SUITE 100, RALEIGH, NC, 27606, UNITED STATES
Covered Properties (7)
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Application: 09/995,019 →
Radio Frequency (Rf) Power Devices Having Faraday Shield Layers Therein
Application: 09/993,412 →
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Application: 09/991,838 →
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Application: 09/992,233 →
Vertical Power Devices Having Deep and Shallow Trenches and Methods of Forming Same
Application: 09/992,104 →
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Application: 10/008,171 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Application: 09/833,132 →