Patent Assignment
Reel/Frame 021617/0327
Assignment of Assignor's Interest
Recorded: 2008-10-02
Pages: 5
Assignor
FUJITSU LIMITED
Executed: 2008-09-30
Assignee
SHARP KABUSHIKI KAISHA
22-22, NAGAIKE-CHO, ABENO-KU, OSAKA-SHI, OSAKA, 545-8522, JAPAN
Covered Properties
(10)
Thin Film Transistor Matrix Device and Method for Fabricating the Same
Patent:
5,742,074 →
Application:
08/669,272 →
Thin Film Transistor Matrix Device and Method for Fabricating the Same
Tft Substrate with Low Contact Resistance and Damage Resistant Terminals
Patent:
6,297,519 →
Application:
09/298,775 →
Tft Substrate with Low Contact Resistance and Damage Resistant Terminals
Thin Film Transistor Matrix Device and Method for Fabricating the Same
Ito Film Contact Structure, Tft Substrate and Manufacture Thereof
Tft Substrate with Low Contact Resistance and Damage Resistant Terminals
Patent:
39,452 →
Application:
10/419,474 →
Thin Film Transistor Matrix Device
Ito Film Contact Structure, Tft Substrate and Manufacture Thereof
Method for Fabricating a Thin Film Transistor Matrix Device
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.