IP Library Assignment 021685/0269
Patent Assignment
Reel/Frame 021685/0269

Assignment of Assignor's Interest

Recorded: 2008-10-15 Pages: 2
Assignors
ONO, HIDEYUKI
Executed: 2008-08-26
IIDA, TETSUYA
Executed: 2008-08-28
Assignee
RENESAS TECHNOLOGY CORP.
6-2, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, 100-0004, JAPAN
Covered Property (1)
Gate Ptotection Diode for High-Frequency Power Amplifier.
Patent: 7,932,562 →
Application: 12/251,790 →
Publication: US 2009/0159974
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Merger and Change of Name Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →