Assignment of Assignor's Interest

Recorded: 2008-12-11 Received: 2008-12-11 Pages: 4

Assignor

FUJITSU LIMITED

Executed: 2008-11-04

Assignee

FUJITSU MICROELECTRONICS LIMITED

7-1, NISHI-SHINJUKU 2-CHOME, SHINJUKU-KU, TOKYO, JPX, 163-0722, JAPAN

Covered Properties (3)

Ferroelectric Semiconductor Memory Device and a Fabrication Process Thereof

Application: 10/445,124 →

Process for Producing a Strontium Ruthenium Oxide Protective Layer on a Top Electrode

Application: 09/797,005 →

Ferroelectric Semiconductor Memory Device and a Fabrication Process Thereof

Application: 09/797,430 →