Assignment of Assignor's Interest

Recorded: 2009-02-27 Pages: 3

Assignor

LEE, JONG-HO

Executed: 2009-02-24

Assignee

KYUNGPOOK NATIONAL UNIVERSITY, SANGYEOK3-DONG, BUK-GU, DAEGU, 702-701, KOREA, REPUBLIC OF

Covered Property (1)

Fin Field Effect Transistor Having Low Leakage Current and Method of Manufacturing the Finfet

Patent: 7,906,814 →

Application: 12/310,532 →

Publication: US 2010/0270619

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.