Patent Assignment
Reel/Frame 022381/0521
Assignment of Assignor's Interest
Recorded: 2009-03-03
Pages: 2
Assignee
HITACHI METALS, LTD.
2-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO 1058614, JAPAN
Covered Property
(1)
Silicon Nitride Substrate, Method of Manufacturing the Same, and Silicon Nitride Circuit Board and Semiconductor Module Using the Same
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.