IP Library Assignment 022383/0479
Patent Assignment
Reel/Frame 022383/0479

Assignment of Assignor's Interest

Recorded: 2009-03-12 Pages: 4
Assignor
KIM, HEE-DAE
Executed: 2008-11-25
Assignee
DONGBU HITEK CO., LTD.
891-10 DAECHI-DONG, GANGNAM-GU, SEOUL, 135-280, KOREA, REPUBLIC OF
Covered Property (1)
A Method of Fabricating a Trench Gate Mosfet for Maximizing Breakdown Voltage
Patent: 7,851,300 →
Application: 12/344,563 →
Publication: US 2009/0166734
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Nov 30, 2017
From: DONGBU HITEK CO., LTD.
To: DB HITEK CO., LTD.
Reel/Frame 044559/0819 →