Change of Name

Recorded: 2009-05-27 Received: 2009-05-27 Pages: 76

Assignor

Executed: 2001-03-29

Assignee

HYNIX SEMICONDUCTOR INC.

SAN 136-1, AMI-RI, BUBAL-EUB, ICHON-SHI, KYOUNGKI-DO, KRX, KOREA, REPUBLIC OF

Covered Properties (3)

Charge Coupled Device and Method of Fabricating the Same

Application: 10/086,520 →

Solid State Ccd Image Sensor Having a Light Shielding Layer

Application: 09/879,061 →

Solid State Image Sensor Device and Method of Fabricating the Same

Application: 09/809,284 →