Patent Assignment
Reel/Frame 022815/0028
Assignment of Assignor's Interest
Recorded: 2009-06-11
Pages: 4
Assignee
ASM JAPAN K.K.
23-1, 6-CHOME, NAGAYAMA, TAMA-SHI, TOKYO, 206-0025, JAPAN
Covered Property
(1)
Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature