Change of Name

Recorded: 2009-07-30 Pages: 3

Assignor

VRAM TECHNOLOGIES, LLC

Executed: 2003-11-04

Assignee

INTEGRATED DISCRETE DEVICES, LLC

3198 AIRPORT LOOP DRIVE, SUITE A2, COSTA MESA, CALIFORNIA, 92626

Covered Properties (6)

Semiconductor Diodes Having Low Forward Conduction Voltage Drop, Low Reverse Current Leakage, and High Avalanche Energy Capability

Patent: 6,420,757 →

Application: 09/395,719 →

Method and apparatus for cylindrical semiconductor diodes

Patent: 6,433,370 →

Application: 09/502,026 →

Method and Apparatus for Patterning Fine Dimensions

Patent: 6,667,237 →

Application: 09/689,074 →

Vertical Metal Oxide Silicon Field Effect Semiconductor Diodes

Patent: 6,537,921 →

Application: 09/864,436 →

Publication: US 2002/0177324

Sidewalls as Semiconductor Etch Stop and Diffusion Barrier

Patent: 6,855,614 →

Application: 09/982,855 →

Publication: US 2002/0066939

Mosfet Power Transistors and Methods

Patent: 6,958,275 →

Application: 10/385,807 →

Publication: US 2004/0180500

Related Assignments (1)

Other recorded transfers of the patents in this record — the chain of ownership.