Assignment of Assignor's Interest

Recorded: 2009-11-25 Pages: 2

Assignor

MATSUURA, KATSUYOSHI

Executed: 2009-09-03

Assignee

FUJITSU MICROELECTRONICS LIMITED

7-1, NISHI-SHINJUKU 2-CHOME, SHINJUKU-KU, TOKYO, 163-0722, JAPAN

Covered Property (1)

Manufacture Method for Semiconductor Device Capable of Preventing Reduction of Ferroelectric Film

Application: 12/624,081 →

Publication: US 2010/0068829

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.