Patent Assignment
Reel/Frame 023626/0128
Assignment of Assignor's Interest
Recorded: 2009-12-09
Pages: 2
Assignors
UCHIYAMA, HIROYUKI
Executed: 2009-11-18
KAWAMURA, TETSUFUMI
Executed: 2009-11-18
WAKANA, HIRONORI
Executed: 2009-11-18
Assignee
HITACHI, LTD.
6-6, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Property
(1)
Oxide Semiconductor Device with Oxide Semiconductor Layers of Different Oxygen Concentrations and Method of Manufacturing the Same