Assignment of Assignor's Interest

Recorded: 2009-12-31 Pages: 2

Assignors

TAKAHASHI, HARUHIKO

Executed: 2009-12-16

MINAKATA, HIROSHI

Executed: 2009-12-16

TAMURA, NAOYOSHI

Executed: 2009-12-16

Assignee

FUJITSU MICROELECTRONICS LIMITED

7-1, NISHI-SHINJUKU 2-CHOME, SHINJUKU-KU, TOKYO, 163-0722, JAPAN

Covered Property (1)

MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE WHOSE GATE INSULATING FILM CONTAINS Hf AND O

Application: 12/646,233 →

Publication: US 2010/0178744

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.