Patent Assignment
Reel/Frame 023851/0714
Assignment of Assignor's Interest
Recorded: 2010-01-27
Pages: 3
Assignors
ITAGAKI, NAHO
Executed: 2009-09-18
IWASAKI, TATSUYA
Executed: 2009-09-18
HOSHINO, KATSUYUKI
Executed: 2009-09-28
Assignee
CANON KABUSHIKI KAISHA
30-2, SHIMOMARUKO 3-CHOME, OHTA-KU, TOKYO, 146-8501, JAPAN
Covered Property
(1)
Substrate for Growing Wurtzite Type Crystal and Method for Manufacturing the Same and Semiconductor Device