IP Library Assignment 023886/0176
Patent Assignment
Reel/Frame 023886/0176

Assignment of Assignor's Interest

Recorded: 2010-02-02 Pages: 3
Assignors
ICHINOSE, KAZUHITO
Executed: 2009-10-26
IMAI, YUKARI
Executed: 2009-10-29
Assignee
RENESAS TECHNOLOGY CORP.
6-2, OTEMACHI 2-CHOME, CHIYODA-KU,, TOKYO, JAPAN
Covered Property (1)
A Method for Manufacturing a Semiconductor Device Having a Silicide Region Comprised of a Silicide of a Nickel Alloy
Patent: 8,158,473 →
Application: 12/698,556 →
Publication: US 2010/0200928
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Jun 24, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024591/0446 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →