Assignment of Assignor's Interest

Recorded: 2010-02-12 Received: 2010-02-12 Pages: 2

Assignors

KAWASHIMA, YOSHIYUKI

Executed: 2009-09-18

HARAGUCHI, KEIICHI

Executed: 2009-09-25

Assignee

RENESAS TECHNOLOGY CORP.

6-2, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, JPX, JAPAN

Covered Property (1)

Semiconductor Device Having a Nonvolatile Memory Cell with a Cap Insulating Film Formed Over a Selection Gate Electrode

Application: 12/699,731 →