IP Library › Assignment 024259/0156
Patent Assignment
Reel/Frame 024259/0156

Change of Name

Recorded: 2010-04-20 Pages: 21
Assignor
YADAV TECHNOLOGY, INC.
Executed: 2009-12-18
Assignee
AVALANCHE TECHNOLOGY, INC.
48371 FREMONT BLVD., SUITE 101, FREMONT, CALIFORNIA, 94538
Covered Properties (10)
Non-Uniform Switching Based Non-Volatile Magnetic Based Memory
Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stablity
Non-Volatile Magnetic Memory Element with Graded Layer
Current- Confined Effect of Magnetic Nano-Current-Channel (Ncc) for Magnetic Random Access Memory (Mram)
An Improved High Capacity Low Cost Multi-State Magnetic Memory
An Improved Low Resistance High-Tmr Magnetic Tunnel Junction and Process for Fabrication Thereof
Method for Manufacturing Non-Volatile Magnetic Memory
A Multi-State Spin-Torque Transfer Magnetic Random Access Memory
Spin-Transfer Torque Magnetic Random Access Memory Having Magnetic Tunnel Junction with Perpendicular Magnetic Anisotropy
Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (Sttmram) Cell
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement Apr 11, 2008
From: YADAV TECHNOLOGY, INC.
To: THOMVEST SEED CAPITAL INC.
Reel/Frame 020792/0860 →
Release of Security Interest Sep 23, 2015
From: THOMVEST SEED CAPITAL INC.
To: AVALANCHE TECHNOLOGY, INC. (FORMERLY YADAV TECHNOLOGY, INC)
Reel/Frame 036638/0594 →