Assignment of Assignor's Interest

Recorded: 2010-06-03 Pages: 4

Assignor

OSHIMA, YUICHI

Executed: 2010-04-30

Assignee

HITACHI CABLE, LTD.

14-1, SOTOKANDA 4-CHOME, CHIYODA-KU, TOKYO, JAPAN

Covered Property (1)

Group Iii Nitride Semiconductor Substrate and Manufacturing Method of the Same

Application: 12/789,746 →

Publication: US 2011/0147759

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.