Assignment of Assignor's Interest

Recorded: 2010-06-10 Pages: 2

Assignors

SHIMA, MASASHI

Executed: 2010-05-27

JOSHIN, KAZUKIYO

Executed: 2010-06-02

SUZUKI, TOSHIHIDE

Executed: 2010-06-02

Assignee

FUJITSU SEMICONDUCTOR LIMITED

2-10-23 SHIN-YOKOHAMA, KOHOKU-KU, YOKOHAMA-SHI, KANAGAWA, 222-0033, JAPAN

Covered Property (1)

Improved Breakdown Voltage Mos Semiconductor Device

Patent: 8,410,550 →

Application: 12/797,078 →

Publication: US 2010/0244965

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.