Patent Assignment
Reel/Frame 025197/0337
Assignment of Assignor's Interest
Recorded: 2010-10-26
Pages: 4
Assignors
YAMAZAKI, SHUNPEI
Executed: 2010-10-14
KOYAMA, JUN
Executed: 2010-10-16
KATO, KIYOSHI
Executed: 2010-10-19
Assignee
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
398, HASE, ATSUGI-SHI, KANAGAWA-KEN, 243-0036, JAPAN
Covered Property
(1)
Oxide-Based Thin-Film Transistor (Tft) Semiconductor Memory Device Having Source/Drain Electrode of One Transistor Connected to Gate Electrode of the Other.