Assignment of Assignor's Interest

Recorded: 2011-07-27 Pages: 3

Assignors

KIM, HYUNG-JUN

Executed: 2011-07-15

JEONG, CHANG-OH

Executed: 2011-07-15

YOON, IL-YONG

Executed: 2011-07-15

Assignee

SAMSUNG ELECTRONICS CO., LTD.

416 MAETAN-DONG, YEONGTONG-GU, GYEONGGI-DO, SUWON-SI, KOREA, REPUBLIC OF

Covered Property (1)

Method of Fabricating Thin-Film Transistor Substrate

Patent: 8,524,549 →

Application: 13/191,833 →

Publication: US 2012/0052638

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.