Assignment of Assignor's Interest

Recorded: 2011-08-17 Pages: 3

Assignors

KAGA, YOUICHIROU

Executed: 2011-05-25

IMAMURA, HISAYUKI

Executed: 2011-05-25

WATANABE, JUNICHI

Executed: 2011-06-07

Assignee

HITACHI METALS, LTD.

1-2-1, SHIBAURA, MINATO-KU, TOKYO, 105-8614, JAPAN

Covered Property (1)

Silicon Nitride Substrate Manufacturing Method, Silicon Nitride Substrate, Silicon Nitride Circuit Substrate, and Semiconductor Module

Patent: 8,858,865 →

Application: 13/138,136 →

Publication: US 2011/0272187

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.