Patent Assignment
Reel/Frame 027231/0292
Assignment of Assignor's Interest
Recorded: 2011-11-15
Received: 2011-11-15
Pages: 19
Assignor
HYNIX SEMICONDUCTOR INC.
Executed: 2011-08-22
Assignee
658868 N.B. INC.
44 CHIPMAN HILL, SUITE 1000, SAINT JOHN, NB, CAX, E2L 2A9, CANADA
Covered Properties
(4)
On Die Termination Mode Transfer Circuit in Semiconductor Memory Device and Its Method
Application:
10/879,650 →
Gate Structure with High K Dielectric
Application:
10/298,564 →
Method of Forming a Metal Gate in a Semiconductor Device Using Atomic Layer Deposition Process
Application:
10/036,156 →
Method for Making High K Dielectric Gate for Semiconductor Device
Application:
09/883,188 →