Assignment of Assignor's Interest

Recorded: 2011-12-14 Pages: 2

Assignor

NISHIMURA, HIDETOMO

Executed: 2011-11-16

Assignee

LAPIS SEMICONDUCTOR CO., LTD.

550-1 HIGASHIASAKAWA-CHO HACHIOUJI-SHI, TOKYO, 193-8550, JAPAN

Covered Property (1)

Method of Forming Element Isolation Layer

Application: 13/324,087 →

Publication: US 2012/0164815

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.