Assignment of Assignor's Interest

Recorded: 2012-01-31 Pages: 2

Assignor

OKIHARA, MASAO

Executed: 2012-01-25

Assignee

LAPIS SEMICONDUCTOR CO., LTD.

550-1 HIGASHIASAKAWA-CHO HACHIOUJI-SHI, TOKYO, 193-8550, JAPAN

Covered Property (1)

Soi Substrate, Method of Manufacturing the Soi Substrate, Semiconductor Device, and Method of Manufacturing the Semiconductor Device

Patent: 9,136,386 →

Application: 13/362,093 →

Publication: US 2012/0193714

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.