Patent Assignment
Reel/Frame 027651/0728
Assignment of Assignor's Interest
Recorded: 2012-02-03
Pages: 2
Assignee
TOWER SEMICONDUCTOR LTD.
RAMAT GABRIEL INDUSTRIAL AREA, P.O. BOX 619, MIGDAL HAEMEK, 23105, ISRAEL
Covered Property
(1)
Method for Generating a Three-Dimensional Nand Memory with Mono-Crystalline Channels Using Sacrificial Material