Patent Assignment
Reel/Frame 027849/0713
Assignment of Assignor's Interest
Recorded: 2012-03-13
Pages: 5
Assignors
FUKUZUMI, YOSHIAKI
Executed: 2012-01-13
AOCHI, HIDEAKI
Executed: 2012-01-18
KITO, MASARU
Executed: 2012-01-13
MIYANO, KIYOTAKA
Executed: 2012-01-16
MORI, SHINJI
Executed: 2012-01-16
MIZUSHIMA, ICHIRO
Executed: 2012-01-16
Assignee
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 105-8001, JAPAN
Covered Property
(1)
Semiconductor Memory Device Having a Circuit Formed on a Single Crystal Semiconductor Layer with Varied Germanium Concentration
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 24, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043709/0035 →
Merger
Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
Change of Name and Address
Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
Change of Name and Address
Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →