Patent Assignment
Reel/Frame 029875/0013
Assignment of Assignor's Interest
Recorded: 2013-02-26
Pages: 4
Assignors
KOMORITA, HIROSHI
Executed: 2013-01-23
NAKAYAMA, NORITAKA
Executed: 2013-01-30
TAKANAMI, KENTARO
Executed: 2013-01-30
Assignees
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
TOSHIBA MATERIALS CO., LTD.
8, SHINSUGITA-CHO, ISOGO-KU, YOKOHAMA-SHI, KANAGAWA-KEN, JAPAN
Covered Property
(1)
Polycrystalline Aluminum Nitride Base Material for Crystal Growth of Gan-Base Semiconductor and Method for Manufacturing Gan-Base Semiconductor Using the Same
Related Assignments
(3)
Other recorded transfers of the patent in this record — the chain of ownership.
Nunc Pro Tunc Assignment
Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO. LTD.
Reel/Frame 074940/0511 →
Change of Name
Feb 19, 2026
From: TOSHIBA MATERIALS CO. LTD.
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 074941/0803 →
Change of Address
Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 074941/0846 →