Patent Assignment
Reel/Frame 030811/0968
Assignment of Assignor's Interest
Recorded: 2013-07-08
Pages: 4
Assignor
NEC CORPORATION
Executed: 2013-06-21
Assignee
RENESAS ELECTRONICS CORPORATION
1753, SHIMONUMABE, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, 211-8668, JAPAN
Covered Properties
(6)
Method for Forming Porous Insulating Film and Semiconductor Device
Field Effect Transistor and Process for Manufacturing Same
Wiring Structure, Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device, Schottky Barrier Diode, Electronic Apparatus, and Method of Producing Semiconductor Device
Heterojunction Field Effect Transistor, Method for Producing Heterojunction Field Effect Transistor, and Electronic Device
Field Effect Transistor
Related Assignments
(8)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 12, 2008
From: TADA, MUNEHIRO; FURUTAKE, NAOYA; TAKEUCHI, TSUNEO; HAYASHI, YOSHIHIRO
To: NEC CORPORATION
Reel/Frame 020959/0357 →
Assignment of Assignor's Interest
Jun 3, 2010
From: OTA, KAZUKI
To: NEC CORPORATION
Reel/Frame 024482/0332 →
Assignment of Assignor's Interest
Aug 8, 2011
From: OTA, KAZUKI; OKAMOTO, YASUHIRO; MIYAMOTO, HIRONOBU
To: NEC CORPORATION
Reel/Frame 026713/0301 →
Assignment of Assignor's Interest
Aug 31, 2011
From: OKAMOTO, YASUHIRO; MIYAMOTO, HIRONOBU; ANDO, YUJI; NAKAYAMA, TATSUO
To: NEC CORPORATION
Reel/Frame 026833/0719 →
Assignment of Assignor's Interest
Aug 31, 2011
From: INOUE, TAKASHI; MIYAMOTO, HIRONOBU; OTA, KAZUKI; NAKAYAMA, TATSUO
To: NEC CORPORATION
Reel/Frame 026833/0741 →
Assignment of Assignor's Interest
Jul 11, 2013
From: NEC CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 030862/0450 →
Change of Address
Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
Assignment of Assignor's Interest
Dec 18, 2017
From: RENESAS ELECTRONICS CORPORATION
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 044415/0951 →